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description the auirf7669l2tr(1) combines the latest automotive hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of a dpak (to-252aa) and only 0.7 mm pr ofile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor ph ase, infra-red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and pro- cesses. the directfet package allows dual sided cooling to maximize thermal transfer in automotive power systems. this hexfet power mosfet is designed for applications where efficiency and power density are essential. the advanced directfet packaging platform coupled with the latest silicon technology allows the auirf7669l2tr(1) to offer substantial system level sav ings and performance improvement specifically in motor drive, high frequency dc-dc and other heavy load applications on ice, hev and ev plat- forms. this mosfet utilizes the latest processing techniques to achieve low on-resistance and low qg per silicon area. addition al features of this mosfet are 175c operating junction temperature and high repetitive peak current capability. these features combine to mak e this mosfet a highly efficient, robust and reliable device for high current automotive applications. www.irf.com 1 06/27/11 auirf7669l2tr auirf7669l2tr1 applicable directfet outline and substrate outline automotive directfet power mosfet automotive grade directfet isometric hexfet ? is a registered trademark of international rectifier. ?
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? $ ? '()* ? + , +, + , ? ! + $ sb sc m2 m4 l4 l6 l8 v (br)dss 100v r ds(on) typ. 3.5m max. 4.4m i d (silicon limited) 114a q g 81nc absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation p d @t a = 25c power dissipation e as single pulse avalanche energy (thermally limited) mj e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ??? 45 r 12.5 ??? r 20 ??? c/w r ??? 1.2 r 0. w/c 20 375 0.83 19 100 w 3.3 260 c -55 to + 175 max. 114 81 460 850 260 see fig.12a, 12b, 15, 16 100
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2 www.irf.com surface mounted on 1 in. square cu (still air).
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) notes through are on page 10 static characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 100 ??? ??? v / . 0.0 / . . .0 .0 .0 v gs(th) / t j gate threshold voltage coefficient ??? -13 ??? mv/c gfs forward transconductance 90 ??? ??? s r g gate resistance ??? 1.5 ??? .0 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 dynamic characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units q g total gate charge ??? 81 120 q gs1 pre-vth gate-to-source charge ??? 23 ??? q gs2 post-vth gate-to-source charge ??? 6.8 ??? nc see fig. 11 q gd gate-to-drain ("miller") charge ??? 34 ??? q godr gate charge overdrive ??? 17.2 ??? q sw switch charge (q gs2 + q gd ) ??? 40.8 ??? q oss output charge ??? 46 ??? nc t d(on) turn-on delay time ??? 15 ??? t r rise time ??? 30 ??? ns t d(off) turn-off delay time ??? 27 ??? t f fall time ??? 14 ??? c iss input capacitance ??? 5660 ??? c oss output capacitance ??? 1140 ??? c rss reverse transfer capacitance ??? 240 ??? pf c oss output capacitance ??? 9250 ??? c oss output capacitance ??? 660 ??? c oss eff. effective output capacitance ??? 1040 ??? diode characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units i s continuous source current ??? ??? 114 (body diode) a i sm pulsed source current ??? ??? 460 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 61 92 ns q rr reverse recovery charge ??? 140 210 nc p-n junction diode. mosfet symbol conditions v gs = 0v v ds = 25v v ds = 25v, i d = 68a showing the integral reverse v ds = 50v, v gs = 10v v gs = 20v v gs = 0v, v ds = 1.0v, f=1.0mhz v gs = 0v, v ds = 80v, f=1.0mhz conditions na conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 68a v ds = v gs , i d = 250 a v ds = 100v, v gs = 0v v ds = 100v, v gs = 0v, t j = 125c v gs = -20v i f = 68a, v dd = 50v di/dt = 100a/ s i s = 68a, v gs = 0v i d = 68a v ds = 16v, v gs = 0v v dd = 50v, v gs = 10v i d = 68a r g = 1.8 ? = 1.0mhz v gs = 0v, v ds = 0v to 80v

www.irf.com 3 0 1 , 2 +3 &, 4 http://www.irf.com 00 "# 5 6 "1'7' 8 8 9 qualification information ? dfet2 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c4 aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 aec-q101-002 human body model class h2 aec-q101-001

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical on-resistance vs. gate voltage fig 4. typical on-resistance vs. drain current fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.8v bottom 5.5v 60 s pulse width tj = 25c 5.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.5v 60 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.8v bottom 5.5v 5 10 15 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 68a t j = 125c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 68a v gs = 10v 0 50 100 150 200 i d , drain current (a) 3.2 3.4 3.6 3.8 4.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 10v 3 4 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = -40c t j = 25c t j = 175c v ds = 25v 60 s pulse width

www.irf.com 5 fig 7. typical threshold voltage vs. junction temperature fig 8. typical source-drain diode forward voltage fig 9. typical forward transconductance vs. drain current fig 10. typical capacitance vs.drain-to-source voltage fig.11 typical gate charge vs.gate-to-source voltage fig 12. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a i d = 1.0ma i d = 1.0a 0 25 50 75 100 125 150 175 200 i d ,drain-to-source current (a) 0 50 100 150 200 250 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 20 s pulse width 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 68a 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = -40c t j = 25c t j = 175c v gs = 0v

6 www.irf.com fig 14. maximum avalanche energy vs. temperature fig 13. maximum safe operating area fig 15. maximum effective transient thermal impedance, junction-to-case fig 16. typical avalanche current vs.pulsewidth 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 12a 19a bottom 68a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.1080 0.000171 0.6140 0.053914 0.4520 0.006099 1.47e-05 0.036168 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse) 0 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100 sec 1msec 10msec dc

www.irf.com 7 fig 17. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 13, 14: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 19a. gate charge test circuit fig 19b. gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f
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+ - fig 20a. switching time test circuit fig 20b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 68a

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please see an-1035 for directfet assembly details and stencil and substrate design recommendations note: for the most current drawing please refer to ir website at http://www .irf.com/package fig 21. + + for hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ::: ::: + - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' :: : : !" :: "# g = gate d = drain s = source g d s d d d d d ss s s ss s

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please see an-1035 for directfet assembly details and stencil and substrate design recommendations automotive directfet part marking note: for the most current drawing please refer to ir website at http://www .irf.com/package code a b c d e f g h j k l m r p 0.017 0.029 0.003 0.007 0.057 0.104 0.236 0.048 0.026 0.024 max 0.360 0.280 0.38 0.68 0.02 0.09 1.35 2.55 5.90 1.18 0.55 0.58 min 9.05 6.85 0.42 0.74 0.08 0.17 1.45 2.65 6.00 1.22 0.65 0.62 max 9.15 7.10 0.015 0.027 0.003 0.001 0.100 0.053 0.232 0.046 0.023 0.022 min 0.270 0.356 metric imperial dimensions 0.98 1.02 0.73 0.77 0.040 0.039 0.030 0.029 l1 0.215 5.35 5.45 0.211 "au" = gate and automotive marking part number logo batch number date code line above the last character of the date code indicates "lead-free"

10 www.irf.com automotive directfet tape & reel dimension (showing component orientation). note: for the most current drawing please refer to ir website at http://www .irf.com/package click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. $"% starting t j = 25c, l = 0.11mh, r g = 25 , i as = 68a. pulse width 400 s; duty cycle 2%.
used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at t j of approximately 90c. reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. (ordered as auirf7669l2tr). for 1000 parts on 7" reel, order auirf7669l2tr1 max n.c n.c 0.520 n.c 3.940 0.880 0.720 0.760 imperial min 330.00 20.20 12.80 1.50 99.00 n.c 16.40 15.90 standard option (qty 4000) code a b c d e f g h max n.c n.c 13.20 n.c 100.00 22.40 18.40 19.40 min 12.992 0.795 0.504 0.059 3.900 n.c 0.650 0.630 metric min 7.000 0.795 0.331 0.059 2.460 n.c n.c 0.630 tr1 option (qty 1000) max n.c n.c 13.50 2.50 n.c n.c n.c n.c min 177.80 20.20 12.98 1.50 62.48 n.c n.c 16.00 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial loaded tape feed direction note: controlling dimensions in mm code a b c d e f g h imperial min 4.69 0.154 0.623 0.291 0.283 0.390 0.059 0.059 max 12.10 4.10 16.30 7.60 7.40 10.10 n.c 1.60 min 11.90 3.90 15.90 7.40 7.20 9.90 1.50 1.50 metric dimensions max 0.476 0.161 0.642 0.299 0.291 0.398 n.c 0.063

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